收藏本站
DMN2005K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
?
?
?
?
?
?
?
?
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
ESD Protected Gate
?
?
?
?
?
?
?
?
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Marking Information: See Page 3
Ordering & Date Code Information: See Below
Weight: 0.008 grams (approximate)
Drain
SOT23
Gate
Body
Diode
D
Source
ESD protected
TOP VIEW
Gate
Protection
Diode
Equivalent Circuit
G
S
TOP VIEW
Ordering Information
(Note 4)
Part Number
DMN2005K-7
Case
SOT23
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DM = Product Type Marking Code
DM
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2005K
Document number: DS30734 Rev. 7 - 2
1 of 6
www.diodes.com
November 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN2005LP4K-7 MOSFET N-CH 20V 200MA 3-DFN
DMN2005LPK-7 MOSFET N-CH 20V 440MA 3-DFN
DMN2009LSS-13 MOSFET N-CH 20V 12A 8-SOIC
DMN2013UFDE-7 MOSF N CH 20V 10.5A U-DFN2020-6
DMN2015UFDE-7 MOSF N CH 20V 10.5A U-DFN2020-6E
DMN2016LFG-7 MOSFET N CH DUAL 20V 5.2A
DMN2016UTS-13 MOSFET N-CH 20V 8.58A 8-TSSOP
DMN2019UTS-13 MOSFET 2N-CH 20V 5.4A TSSOP-8
相关代理商/技术参数
DMN2005LP4K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LP4K_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LP4K-7 功能描述:MOSFET 30V 300mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2005LP4K-7-01 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N-CHANNEL SOT-363 GREEN 3K - Tape and Reel
DMN2005LPK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LPK_0710 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LPK-7 功能描述:MOSFET 20V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2009LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET